Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
Identifieur interne : 002519 ( Main/Repository ); précédent : 002518; suivant : 002520Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
Auteurs : RBID : Pascal:11-0323255Descripteurs français
- Pascal (Inist)
- Dépôt pulvérisation, Couche mince amorphe, Réflecteur Bragg réparti, Laser cavité verticale, Laser semiconducteur, Laser émission surface, Couche mince, Dépôt physique phase vapeur, Dépôt plasma, Propriété optique, Propriété surface, Facteur réflexion, Couche épaisse, Couche mince diélectrique, Matériau amorphe hydrogéné, Nitrure de silicium, Silicium, Phosphure d'indium, Multicouche, Méthode matrice transfert, Largeur bande, Hydrogénation, Semiconducteur III-V, Composé III-V, Onde entretenue, Couche multimoléculaire, Revêtement optique, Microcavité, Dispositif optoélectronique, a-Si:H, Substrat verre, Si, InP, 8115C, 4255P, 8115J, 5277D.
English descriptors
- KwdEn :
- Amorphous hydrogenated material, Amorphous thin film, Bandwidth, Continuous wave, Dielectric thin films, Distributed Bragg reflectors, Hydrogenation, III-V compound, III-V semiconductors, Indium phosphide, Microcavities, Multilayer, Multilayers, Optical coatings, Optical properties, Optoelectronic devices, Physical vapor deposition, Plasma deposition, Reflectivity, Semiconductor lasers, Silicon, Silicon nitride, Sputter deposition, Surface emitting lasers, Surface properties, Thick films, Thin films, Transfer matrix method, Vertical cavity laser.
Abstract
In this work, we report a study of hydrogenated amorphous silicon (a-SiH) films deposited by radio frequency magnetron sputtering for application in Vertical Cavity Surface Emitting Lasers (VCSEL) elaboration. The influence of the hydrogen dilution in the plasma during the deposition on the optical and surface properties is investigated. After selection of the deposition parameters, a-SiH films have been combined with amorphous silicon nitride (a-SiNx) films to provide high reflectivity Bragg reflectors. Distributed Bragg reflector (DBR) based on these quarter wavelength thick dielectric layers have been realized and characterized by optical measurements and compared with theoretical calculations based on the transfer matrix method. A maximum reflectivity of 99.2% at 1.6 μm and a large spectral bandwidth of 700 nm have been reached with only four and a half periods of a-SiH/a-SiNx deposited on a glass substrate. Residual absorption at 1.55 μm has been measured to be as low as 60 cm-1 with a-SiH layers, compared with 400 cm-1 loss with amorphous silicon without hydrogenation step. Finally, DBR comprising six a-SiH/a-SiNx periods have been included in an InP-based VCSEL. Laser emission is demonstrated at room temperature in continuous wave operation with a photopumping experiment.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications</title><author><name sortKey="Shuaib, A" uniqKey="Shuaib A">A. Shuaib</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Levallois, C" uniqKey="Levallois C">C. Levallois</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Gauthier, J P" uniqKey="Gauthier J">J. P. Gauthier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Paranthoen, C" uniqKey="Paranthoen C">C. Paranthoen</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Durand, O" uniqKey="Durand O">O. Durand</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Cornet, C" uniqKey="Cornet C">C. Cornet</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Chevalier, N" uniqKey="Chevalier N">N. Chevalier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author><author><name sortKey="Le Corre, A" uniqKey="Le Corre A">A. Le Corre</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Rennes</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0323255</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0323255 INIST</idno><idno type="RBID">Pascal:11-0323255</idno><idno type="wicri:Area/Main/Corpus">002E37</idno><idno type="wicri:Area/Main/Repository">002519</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous hydrogenated material</term><term>Amorphous thin film</term><term>Bandwidth</term><term>Continuous wave</term><term>Dielectric thin films</term><term>Distributed Bragg reflectors</term><term>Hydrogenation</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Microcavities</term><term>Multilayer</term><term>Multilayers</term><term>Optical coatings</term><term>Optical properties</term><term>Optoelectronic devices</term><term>Physical vapor deposition</term><term>Plasma deposition</term><term>Reflectivity</term><term>Semiconductor lasers</term><term>Silicon</term><term>Silicon nitride</term><term>Sputter deposition</term><term>Surface emitting lasers</term><term>Surface properties</term><term>Thick films</term><term>Thin films</term><term>Transfer matrix method</term><term>Vertical cavity laser</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt pulvérisation</term><term>Couche mince amorphe</term><term>Réflecteur Bragg réparti</term><term>Laser cavité verticale</term><term>Laser semiconducteur</term><term>Laser émission surface</term><term>Couche mince</term><term>Dépôt physique phase vapeur</term><term>Dépôt plasma</term><term>Propriété optique</term><term>Propriété surface</term><term>Facteur réflexion</term><term>Couche épaisse</term><term>Couche mince diélectrique</term><term>Matériau amorphe hydrogéné</term><term>Nitrure de silicium</term><term>Silicium</term><term>Phosphure d'indium</term><term>Multicouche</term><term>Méthode matrice transfert</term><term>Largeur bande</term><term>Hydrogénation</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Onde entretenue</term><term>Couche multimoléculaire</term><term>Revêtement optique</term><term>Microcavité</term><term>Dispositif optoélectronique</term><term>a-Si:H</term><term>Substrat verre</term><term>Si</term><term>InP</term><term>8115C</term><term>4255P</term><term>8115J</term><term>5277D</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work, we report a study of hydrogenated amorphous silicon (a-SiH) films deposited by radio frequency magnetron sputtering for application in Vertical Cavity Surface Emitting Lasers (VCSEL) elaboration. The influence of the hydrogen dilution in the plasma during the deposition on the optical and surface properties is investigated. After selection of the deposition parameters, a-SiH films have been combined with amorphous silicon nitride (a-SiN<sub>x</sub>) films to provide high reflectivity Bragg reflectors. Distributed Bragg reflector (DBR) based on these quarter wavelength thick dielectric layers have been realized and characterized by optical measurements and compared with theoretical calculations based on the transfer matrix method. A maximum reflectivity of 99.2% at 1.6 μm and a large spectral bandwidth of 700 nm have been reached with only four and a half periods of a-SiH/a-SiN<sub>x</sub> deposited on a glass substrate. Residual absorption at 1.55 μm has been measured to be as low as 60 cm<sup>-1</sup> with a-SiH layers, compared with 400 cm<sup>-1</sup> loss with amorphous silicon without hydrogenation step. Finally, DBR comprising six a-SiH/a-SiN<sub>x</sub> periods have been included in an InP-based VCSEL. Laser emission is demonstrated at room temperature in continuous wave operation with a photopumping experiment.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>519</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications</s1></fA08><fA11 i1="01" i2="1"><s1>SHUAIB (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEVALLOIS (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>GAUTHIER (J. P.)</s1></fA11><fA11 i1="04" i2="1"><s1>PARANTHOEN (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>DURAND (O.)</s1></fA11><fA11 i1="06" i2="1"><s1>CORNET (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHEVALIER (N.)</s1></fA11><fA11 i1="08" i2="1"><s1>LE CORRE (A.)</s1></fA11><fA14 i1="01"><s1>Université Européenne de Bretagne, France INSA, FOTON, UMR 6082</s1><s2>35708 Rennes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>6178-6182</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000190435540620</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0323255</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work, we report a study of hydrogenated amorphous silicon (a-SiH) films deposited by radio frequency magnetron sputtering for application in Vertical Cavity Surface Emitting Lasers (VCSEL) elaboration. The influence of the hydrogen dilution in the plasma during the deposition on the optical and surface properties is investigated. After selection of the deposition parameters, a-SiH films have been combined with amorphous silicon nitride (a-SiN<sub>x</sub>) films to provide high reflectivity Bragg reflectors. Distributed Bragg reflector (DBR) based on these quarter wavelength thick dielectric layers have been realized and characterized by optical measurements and compared with theoretical calculations based on the transfer matrix method. A maximum reflectivity of 99.2% at 1.6 μm and a large spectral bandwidth of 700 nm have been reached with only four and a half periods of a-SiH/a-SiN<sub>x</sub> deposited on a glass substrate. Residual absorption at 1.55 μm has been measured to be as low as 60 cm<sup>-1</sup> with a-SiH layers, compared with 400 cm<sup>-1</sup> loss with amorphous silicon without hydrogenation step. Finally, DBR comprising six a-SiH/a-SiN<sub>x</sub> periods have been included in an InP-based VCSEL. Laser emission is demonstrated at room temperature in continuous wave operation with a photopumping experiment.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15J</s0></fC02><fC02 i1="04" i2="3"><s0>001B50B77D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Sputter deposition</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Couche mince amorphe</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Amorphous thin film</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Capa fina amorfa</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Réflecteur Bragg réparti</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Distributed Bragg reflectors</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Laser cavité verticale</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Vertical cavity 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l="FRE"><s0>Semiconducteur III-V</s0><s5>32</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>32</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Composé III-V</s0><s5>33</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>III-V compound</s0><s5>33</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>33</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Onde entretenue</s0><s5>34</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Continuous wave</s0><s5>34</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Onda continua</s0><s5>34</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Couche multimoléculaire</s0><s5>35</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Multilayer</s0><s5>35</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Capa multimolecular</s0><s5>35</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Revêtement optique</s0><s5>36</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Optical coatings</s0><s5>36</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Microcavité</s0><s5>37</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Microcavities</s0><s5>37</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0><s5>38</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Optoelectronic devices</s0><s5>38</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>a-Si:H</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>Substrat verre</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>Si</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="35" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="36" i2="3" l="FRE"><s0>8115J</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="37" i2="3" l="FRE"><s0>5277D</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>220</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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